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부품번호 | DTB523YE 기능 |
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기능 | (DTB523YE / DTB523YM) Digital transistors | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 2 페이지수
www.DataSheet4U.com
Transistors
DTB523YE / DTB523YM
-500mA / -12V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB523YE / DTB523YM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTB523YE
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15 (1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X53
DTB523YM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X53
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
∗1
IC (max)
Power dissipation ∗2
PD
Junction temperature
Tj
Storage temperature
Tstg
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Limits
DTB523YE DTB523YM
−12
−12 to +5
−500
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
zPackaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTB523YE
DTB523YM
−
VMT3
Taping
T2L
8000
−
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI(off)
VI(on)
−
−2.5
−
−
Output voltage
VO(on) − −60
Input current
II − −
Output current
IO(off)
−
−
DC current gain
Transition frequency ∗
GI 140 −
fT − 260
Input resistance
R1 1.54 2.2
Resistance ratio
R2/R1 3.6 4.5
∗ Characteristics of built-in transistor.
Max.
−0.3
−
−300
−3.0
−0.5
−
−
2.86
5.5
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −100mA / −5mA
VI= −5V
VCC= −12V, VI=0V
VO= −2V, IO= −100mA
VCE= −10V, IE=5mA, f=100MHz
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND(+)
IN OUT
GND(+)
R1=2.2kΩ / R2=10kΩ
1/1
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부품번호 | 상세설명 및 기능 | 제조사 |
DTB523YE | (DTB523YE / DTB523YM) Digital transistors | ROHM Semiconductor |
DTB523YM | (DTB523YE / DTB523YM) Digital transistors | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |