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NESG2021M05 데이터시트 PDF




CEL에서 제조한 전자 부품 NESG2021M05은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NESG2021M05 기능
기능 NPN SiGe HIGH FREQUENCY TRANSISTOR
제조업체 CEL
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NESG2021M05 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M05
FEATURES
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
Pb Free
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2021M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2021M05
M05
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 12 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 12 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain3 at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9.0
17.0
25
0.1
190
MAX
1.2
0.2
100
100
260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
California Eastern Laboratories




NESG2021M05 pdf, 반도체, 판매, 대치품
NESG2021M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
20
15
10
5
0
1 10 100
Collector Current, lC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
40
VCE = 1 V
IC = 10 mA
35
30 MSG
MAG
25
20
2
|S21e|
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
40
VCE = 3 V
IC = 10 mA
35
30 MSG
MAG
25
20
2
|S21e|
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1 10 100
Collector Current, lC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. FREQUENCY
40
VCE = 2 V
IC = 10 mA
35
30 MSG
MAG
25
20
|S21e|2
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 1 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)

4페이지










NESG2021M05 전자부품, 판매, 대치품
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20 50
VCE = 3 V, f = 2 GHz
Icq = 12 mA (RF OFF)
15 40
Pout
10 30
5
IC
0
-5
-20 -15 -10
-5
0
Collector Current, IC (mA)
20
10
0
5
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
VCE = 3 V, f = 5.2 GHz
Icq = 12 mA (RF OFF)
15
50
40
Pout
10 30
5 20
IC
0 10
-5
-20 -15 -10
-5
0
Collector Current, IC (mA)
0
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 1 GHz
5
Ga
30
25
4 20
3 15
2
NF
1
10
5
00
1 10 100
Input Power, Pin (dBm)
NESG2021M05
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
VCE = 3 V, f = 3 GHz
Icq = 12 mA (RF OFF)
50
15 40
Pout
10 30
5 20
IC
0 10
-5
-25 -20 -15 -10
-5
0
0
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 1 GHz
5
Ga
30
25
4 20
3 15
2
NF
1
10
5
00
1 10 100
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 2 GHz
5
30
25
4 Ga
20
3 15
2 10
1
NF
5
00
1 10 100
Input Power, Pin (dBm)

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