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부품번호 | NESG2021M05 기능 |
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기능 | NPN SiGe HIGH FREQUENCY TRANSISTOR | ||
제조업체 | CEL | ||
로고 | |||
전체 14 페이지수
www.DataSheet4U.com
DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M05
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
• Pb Free
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2021M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2021M05
M05
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 12 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 12 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain3 at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9.0
17.0
25
0.1
190
MAX
1.2
0.2
100
100
260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
California Eastern Laboratories
NESG2021M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
20
15
10
5
0
1 10 100
Collector Current, lC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
40
VCE = 1 V
IC = 10 mA
35
30 MSG
MAG
25
20
2
|S21e|
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
40
VCE = 3 V
IC = 10 mA
35
30 MSG
MAG
25
20
2
|S21e|
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1 10 100
Collector Current, lC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. FREQUENCY
40
VCE = 2 V
IC = 10 mA
35
30 MSG
MAG
25
20
|S21e|2
15
10
5
0
0.1 1
10 100
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 1 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
4페이지 TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20 50
VCE = 3 V, f = 2 GHz
Icq = 12 mA (RF OFF)
15 40
Pout
10 30
5
IC
0
-5
-20 -15 -10
-5
0
Collector Current, IC (mA)
20
10
0
5
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
VCE = 3 V, f = 5.2 GHz
Icq = 12 mA (RF OFF)
15
50
40
Pout
10 30
5 20
IC
0 10
-5
-20 -15 -10
-5
0
Collector Current, IC (mA)
0
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 1 GHz
5
Ga
30
25
4 20
3 15
2
NF
1
10
5
00
1 10 100
Input Power, Pin (dBm)
NESG2021M05
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
VCE = 3 V, f = 3 GHz
Icq = 12 mA (RF OFF)
50
15 40
Pout
10 30
5 20
IC
0 10
-5
-25 -20 -15 -10
-5
0
0
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 1 GHz
5
Ga
30
25
4 20
3 15
2
NF
1
10
5
00
1 10 100
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 2 GHz
5
30
25
4 Ga
20
3 15
2 10
1
NF
5
00
1 10 100
Input Power, Pin (dBm)
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
NESG2021M05 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CEL |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |