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부품번호 | NESG3031M14 기능 |
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기능 | NPN SiGe HIGH FREQUENCY TRANSISTOR | ||
제조업체 | CEL | ||
로고 | |||
전체 9 페이지수
www.DataSheet4U.com
DATASHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M14
FEATURES
• THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE,
HIGH-GAIN AMPLIFICATION:
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY (UHS3) ADOPTED:
fmax = 110 GHz
• M14 PACKAGE:
4-pin lead-less minimold package
M14 Package
ORDERING INFORMATION
PART NUMBER
NESG3031M14-A
NESG3031M14-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
12.0
4.3
1.5
35
150
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
UNIT
V
V
V
mA
mW
°C
°C
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
California Eastern Laboratories
1
NESG3031M14
1,000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
100
1,000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
100
10
0.1
1,000
1 10
Collector Current IC (mA)
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 2 V
25 f = 2 GHz
20
15
10
5
0
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
10
0.1
1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 2 GHz
25
20
15
10
5
0
1 10 100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
25 f = 2 GHz
20
15
10
5
0
1 10 100
Collector Current IC (mA)
4
4페이지 OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 2.4 GHz
IC (set) = 20 mA
15
Pout
10
50
40
30
5 IC 20
0 10
-5
-20
-15 -10
-5
0
Input Power Pin (dBm)
0
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5 20
Ga
4 16
3 12
28
1 NF
4
VCE = 2 V
f = 2.4 GHz
00
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
NESG3031M14
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
VCE = 3 V, f = 5.8 GHz
IC (set) = 20 mA
15
50
40
Pout
10 30
5 IC 20
0 10
-5
-15
-10 -5 0 5
Input Power Pin (dBm)
0
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5 15
4 Ga 12
39
26
1 NF 3
VCE = 2 V
f = 5.8 GHz
00
1 10 100
Collector Current IC (mA)
7
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부품번호 | 상세설명 및 기능 | 제조사 |
NESG3031M14 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CEL |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |