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부품번호 | 33395 기능 |
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기능 | Three-Phase Gate Driver IC | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 16 페이지수
www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Three-Phase Gate Driver IC
The 33395 simplifies the design of high-power BLDC motor control
design by combining the gate drive, charge pump, current sense, and
protection circuitry necessary to drive a three-phase bridge
configuration of six N-channel power MOSFETs. Mode logic is
incorporated to route a pulse width modulation (PWM) or a
complementary PWM output signal to either low-side or high-side
MOSFETs of the bridge.
Detection and drive circuitry are also incorporated to control a
reverse battery protection high-side MOSFET switch. PWM
frequencies up to 28 kHz are possible. Built-in protection circuitry
prevents damage to the MOSFET bridge as well as the drive IC and
includes overvoltage shutdown, overtemperature shutdown,
overcurrent shutdown, and undervoltage shutdown.
The device is parametrically specified over ambient temperature
range of -40°C ≤ TA ≤ 125°C and 5.5 V ≤ VIGN ≤ 24 V supply.
Features
• Drives Six N-Channel Low RDS(ON) Power MOSFETs
• Built-In Charge Pump Circuitry
• Built-In Current Sense Comparator and Output Drive Current
Limiting
• Built-In PWM Mode Control Logic
• Built-In Circuit Protection
• Designed for Fractional to Integral HP BLDC Motors
• 32-Pin SOIC Wide Body Surface Mount Package
• 33395 Incorporates a <5.0 µs Shoot-Through Suppression Timer
• 33395T Incorporates a <1.0 µs Shoot-Through Suppression Timer
• Pb-Free Packaging Designated by Suffix Code EW
Document Number: MC33395
Rev 4.0, 2/2007
33395
33395T
THREE-PHASE
GATE DRIVER IC
DWB SUFFIX
EW SUFFIX (Pb-FREE)
98ARH99137A
32-PIN SOICW
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33395DWB/R2
32 SOICW
MC33395EW/R2
MCZ33395EW/R2 -40°C to 125°C
MC33395TDWB/R2
32 SOICW
(Pb-Free)
32 SOICW
MC33395TEW/R2
32 SOICW
(Pb-Free)
VPWR
VDD
3
2
MCU
3
33395
VGDH
VIGN
VDD
CP1H
CP1L
CP2H
CP2L
CRES
VIGNP
GDH1
GDH2
GDH3
SRC1
SRC2
SRC3
HSE1–3
MODE0–1 GDL1
PWM
GDL2
LSE1–3
GDL3
-ISENS
AGND
PGND +ISENS
VDD
NH
SS
NH
Figure 1. 33395 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
PIN CONNECTIONS
Table 1. 33395 Pin Definitions (continued)
A functional description of each pin can be found in the Functional Pin Description section beginning on page 9.
Pin Number Pin Name Pin Function Formal Name
Definition
22
MODE1
Input
Mode Control Bit 1 Input for mode control selection
23
MODE0
Input
Mode Control Bit 0 Input for mode control selection
24
HSE3
Input
High-Side Enable Input for high-side enable logic, phase 3
25
HSE2
Input
High-Side Enable Input for high-side enable logic, phase 2
26
HSE1
Input
High-Side Enable Input for high-side enable logic, phase 1
27
LSE3
Input
Low-Side Enable Input for low-side enable logic, phase 3
28
LSE2
Input
Low-Side Enable Input for low-side enable logic, phase 2
29
LSE1
Input
Low-Side Enable Input for low-side enable logic, phase 1
30
CP1L
Input
External Pump
Input from external pump capacitor for charge pump and secondary pins
Capacitor
31
CP1H
Input
External Pump
Input from external pump capacitor for charge pump and secondary pins
Capacitor
32
CP2L
Input
Charge Pump
Input from external reservoir, external pump capacitors for charge pump,
Capacitor
and secondary pins
33395
4
Analog Integrated Circuit Device Data
Freescale Semiconductor
4페이지 ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C ≤ TA ≤ 125°C, 5.5 V ≤ VIGNP ≤ 24 V unless otherwise noted. Typical values reflect
approximate parameter mean at TA = 25°C under normal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ Max Unit
INPUT/OUTPUT (CONTINUED)
VGDL Low-Side Output Voltage GDHn in ON State
VIGNP = 5.5 V, IGDLn = 1.0 mA
VIGNP = 12 V, IGDLn = 5.0 mA
VIGNP = 24 V, IGDLn = 0.0 mA
VIGNP = 24 V, IGDLn = 5.0 mA
VGDL(on)
VGDL Output Voltage GDHn in OFF State
VIGNP = 14 V, IGDLn = 1.0 mA
VGDL(off)
Thermal Shutdown (7)
TLIM
Notes
7. Guaranteed by design and characterization. Not production tested.
5.0
8.0
8.0
8.0
-1.0
160
V
8.0 18
14 18
17 19
16 19
V
0.3 1.0
– 190 °C
Analog Integrated Circuit Device Data
Freescale Semiconductor
33395
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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