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33883 PDF 데이터시트 ( Data , Function )

부품번호 33883 기능
기능 H-Bridge Gate Driver IC
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33883 데이터시트, 핀배열, 회로
www.DFaretaeSshceeatl4eUS.ceommiconductor
Advance Information
H-Bridge Gate Driver IC
The 33883 is an H-bridge gate driver (also known as a full-bridge
pre-driver) IC with integrated charge pump and independent high-
and low-side gate driver channels. The gate driver channels are
independently controlled by four separate input terminals, thus
allowing the device to be optionally configured as two independent
high-side gate drivers and two independent low-side gate drivers.
The low-side channels are referenced to ground. The high-side
channels are floating.
The gate driver outputs can source and sink up to 1.0 A peak
current pulses, permitting large gate-charge MOSFETs to be driven
and/or high Pulse Width Modulation (PWM) frequencies to be utilized.
A linear regulator is incorporated, providing a 15 V typical gate supply
to the low-side gate drivers.
Features
• VCC Operating Voltage Range from 5.5 V up to 55 V
• VCC2 Operating Voltage Range from 5.5 V up to 28 V
• CMOS/LSTTL Compatible I/O
• 1.0 A Peak Gate Driver Current
• Built-In High-Side Charge Pump
• Undervoltage Lockout (UVLO)
• Overvoltage Lockout (OVLO)
• Global Enable with <10 µA Sleep Mode
• Supports PWM up to 100 kHz
• Pb-Free Packaging Designated by Suffix Code EG
Document Number: MC33883
Rev 9.0, 1/2007
33883
H-BRIDGE GATE DRIVER IC
DW SUFFIX
EG SUFFIX (PB-FREE)
98ASB42343B
20-TERMINAL SOICW
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33883DW/R2
MCZ33883EG/R2
-40°C to 125°C
20 SOICW
VBAT VBOOST
33883
VCC CP_OUT
VCC2
G_EN
LR_OUT
C1 GATE_HS1
C2 SRC_HS1
MCU GATE_LS1
GATE_HS2
IN_HS1 SRC_HS2
IN_LS1 GATE_LS2
IN_HS2
IN_LS2 GND_A GND /2
Figure 1. 33883 Simplified Application Diagram
DC
Motor
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.




33883 pdf, 반도체, 판매, 대치품
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Rating
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage 1
Supply Voltage 2 (1)
VCC
VCC2
-0.3 to 65
-0.3 to 35
V
V
Linear Regulator Output Voltage
VLR_OUT
-0.3 to 18
V
High-Side Floating Supply Absolute Voltage
VCP_OUT
-0.3 to 65
V
High-Side Floating Source Voltage
VSRC_HS
-2.0 to 65
V
High-Side Source Current from CP_OUT in Switch ON State
IS
250 mA
High-Side Gate Voltage
High-Side Gate Source Voltage (2)
VGATE_HS
VGATE_HS -
VSRC_HS
-0.3 to 65
-0.3 to 20
V
V
High-Side Floating Supply Gate Voltage
VCP_OUT -
VGATE_HS
-0.3 to 65
V
Low-Side Gate Voltage
VGATE_LS
-0.3 to 17
V
Wake-Up Voltage
VG_EN
-0.3 to 35
V
Logic Input Voltage
VIN
-0.3 to 10
V
Charge Pump Capacitor Voltage
VC1
-0.3 to VLR_OUT
V
Charge Pump Capacitor Voltage
ESD Voltage (3)
Human Body Model on All Pins (VCC and VCC2 as Two Power
Supplies)
Machine Model
VC2
VESD1
VESD2
-0.3 to 65
±1500
±130
V
V
Notes
1. VCC2 can sustain load dump pulse of 40 V, 400 ms, 2.0 .
2. In case of high current (SRC_HS>100 mA) and high voltage (>20 V) between GATE_HSX and SRC_HS an external zener of 18 V is
needed as shown in Figure 14.
3. ESD1 testing is performed in accordance with the Human Body Model (CZAP=100 pF, RZAP=1500 ), ESD2 testing is performed in
accordance with the Machine Model (CZAP=200 pF, RZAP=0 ).
33883
4
Analog Integrated Circuit Device Data
Freescale Semiconductor

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33883 전자부품, 판매, 대치품
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions VCC = 12 V, VCC2 = 12 V, CCP = 33 nF, G_EN = 4.5 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
SUPPLY VOLTAGE
Quiescent VCC Supply Current
VG_EN = 0 V and VCC = 55 V
VG_EN = 0 V and VCC = 12 V
Operating VCC Supply Current (6)
VCC = 55 V and VCC2 = 28 V
VCC = 12 V and VCC2 = 12 V
Additional Operating VCC Supply Current for Each Logic Input Terminal
Active
VCC = 55 V and VCC2 = 28 V (7)
Quiescent VCC2 Supply Current
VG_EN = 0 V and VCC = 12 V
VG_EN = 0 V and VCC = 28 V
Operating VCC2 Supply Current (6)
VCC = 55 V and VCC2 = 28 V
VCC = 12 V and VCC2 = 12 V
Additional Operating VCC2 Supply Current for Each Logic Input Terminal
Active
VCC = 55 V and VCC2 = 28 V (7)
IVCCSLEEP
IVCCOP
IVCCLOG
IVCC2SLEEP
IVCC2OP
IVCC2LOG
µA
– 10
– 10
mA
2.2 –
0.7 –
mA
– 5.0
µA
– 5.0
– 5.0
mA
– 12
– 9.0
mA
– 5.0
Undervoltage Shutdown VCC
Undervoltage Shutdown VCC2 (8)
Overvoltage Shutdown VCC
Overvoltage Shutdown VCC2
UV
UV2
OV
OV2
4.0 5.0
4.0 5.0
57 61
29.5 31
5.5 V
5.5 V
65 V
35 V
OUTPUT
Output Sink Resistance (Turned Off)
Idischarge LSS = 50 mA, VSRC_HS = 0 V (8)
RDS
– – 22
Output Source Resistance (Turned On)
Icharge HSS = 50 mA, VCP_OUT = 20 V (8)
RDS
– – 22
Charge Current of the External High-Side MOSFET Through GATE_HSn
Terminal (9)
Maximum Voltage (VGATE_HS - VSRC_HS)
INH = Logic 1, ISmax = 5.0 mA
ICHARGE HSS
VMAX
mA
100 200
V
– 18
Notes
6. Logic input terminal inactive (high impedance).
7. High-frequency PWM-ing (» 20 kHz) of the logic inputs will result in greater power dissipation within the device. Care must be taken to
remain within the package power handling rating.
8. The device may exhibit predictable behavior between 4.0 V and 5.5 V.
9. See Figure 5, page 12, for a description of charge current.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33883
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