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Freescale Semiconductor에서 제조한 전자 부품 MCZ33198은 전자 산업 및 응용 분야에서
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부품번호 MCZ33198 기능
기능 Automotive High-Side TMOS Driver
제조업체 Freescale Semiconductor
로고 Freescale Semiconductor 로고


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MCZ33198 데이터시트, 핀배열, 회로
www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Automotive High-Side TMOS
Driver
Document Number: MC33198
Rev. 2.0, 11/2006
33198
The MC33198 is a high-side TMOS driver, dedicated to automotive
applications. It is used in conjunction with an external power MOSFET
for high-side drive applications. The device can drive and protect a
HIGH-SIDE TMOS DRIVER
large variety of MOSFETs. The device has a CMOS compatible input
control, charge pump to drive the MOSFET gate, and fault detection
circuitry based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to eliminate
undesired switch off due to in rush currents, and a status pin which
reports the output status of both on and off MOSFET states. The device
uses few external components and offers an economical solution to
large current high side switches. It also has PWM capability up to 1kHz.
Features
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
• Designed for Automotive High Side Driver Application
• Works with a Wide Variety of N-Channel Power MOSFETs
• PWM Capability
ORDERING INFORMATION
• On Board Charge Pump Capable of Charging 25nF in less than 1ms
with No External Components Required
• Drive Inductive Load with No External Clamp Circuitry Required
• CMOS Logic Compatible Input Control
• TMOS Over Current and Short Circuit Protection
Device
MC33198D
MCZ33198EF/R2
Temperature
Range (TA)
-40°C to 125°C
Package
8 SOICN
• Fault Output to Report an MOSFET Overcurrent Condition
• Output Status Available when MOSFET is On or Off
• Extended Temperature Range from -40°C to 125°C
• Protected Against Automotive Transients with few External Components
• Overvoltage and Undervoltage Shutdown
• Pb-Free Packaging Designated by Suffix Code EF
MCU
5.0V
33198
VCC
DRN
INPUT
GATE
STATUS
SRC
TIMER
GND
V BAT
LOAD
Figure 1. 33198 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.




MCZ33198 pdf, 반도체, 판매, 대치품
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Power Supply Voltage
TMOS Source Voltage
Comparator Threshold
Gate Output Voltage
Input Voltage
Status
ESD Voltage Capability (1)
THERMAL RATINGS
Storage Temperature
Operating Junction Temperature
THERMAL RESISTANCE
VCC
VSRC
VDRN
VGATE
VIN
VST
VESD
TSTG
TJ
- 0,6 to 60
- 0,6 to 60
- 0,6 to 60
- 0,6 to 25
- 0,6 to 25
- 0,6 to 10
+/-2000
-55 to +150
-40 to +150
V
V
V
V
V
V
V
°C
°C
Thermal Resistance J/A
Peak Package Reflow Temperature During Reflow (2), (3)
RJ
TPPRT
145
Note 3
°C
°C
Notes
1. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 ), the Machine Model (MM)
(CZAP = 200 pF, RZAP = 0 ), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF).
2. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
3. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
33198
4
Analog Integrated Circuit Device Data
Freescale Semiconductor

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MCZ33198 전자부품, 판매, 대치품
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 7.0 V VSUP 18 V, -40°C TA 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Parameter
Vcc = 7.0V
Vcc = 14V
Vcc = 21V
Unit
TYPICAL RISE TIME (TR) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4)
C = 1.0nF
15 7.0 10
C = 3.0nF
60 25 40
C = 10nF
140 80
90
C = 30nF
730 270 340
µs
µs
µs
µs
TYPICAL FALL TIME (TF) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4)
C = 1.0nF
150 230 280
C = 3.0nF
430 800 950
C = 10nF
1200
2300
2750
C = 30nF
4800
8000
9200
µs
µs
µs
µs
TIMING DIAGRAMS
51 2
VCC SRC DRN
6 STATUS
GATE 4
7 INPUT
TIMER
8
GND
3
Vcc 5V
0V
Typically (VCC + 15V)
C 90%
10%
INPUT Pin 7
GATE Pin 4
t
R
Figure 4. Timing Measurements Test Schematic
t
F
Analog Integrated Circuit Device Data
Freescale Semiconductor
33198
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