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What is MCZ33390?

This electronic component, produced by the manufacturer "Freescale Semiconductor", performs the same function as "Class B Serial Transceiver".


MCZ33390 Datasheet PDF - Freescale Semiconductor

Part Number MCZ33390
Description Class B Serial Transceiver
Manufacturers Freescale Semiconductor 
Logo Freescale Semiconductor Logo 


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www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Class B Serial Transceiver
The 33390 is a serial transceiver designed to provide bi-directional
half-duplex communication meeting the automotive SAE Standard J-
1850 Class B Data Communication Network Interface specification. It
is designed to interface directly to on-board vehicle microcontrollers
and serves to transmit and receive data on a single-wire bus at data
rates of 10.4 kbps using Variable Pulse Width Modulation (VPWM).
The 33390 operates directly from a vehicle's 12 V battery system and
functions in a logic fashion as an I/O interface between the
microcontroller's 5.0 V CMOS logic level swings and the required 0 V
to 7.0 V waveshaped signal swings of the bus. The bus output driver
is short circuit current limited.
Features
• Designed for SAE J-1850 Class B Data Rates
• Full Operational Bus Dynamics Over a Supply Voltage of 9.0 to
16 V
• Ambient Operating Temperature of -40°C to 125°C
• Interfaces Directly to Standard 5.0 V CMOS Microcontroller
• BUS Pin Protected Against Shorts to Battery and Ground
• Thermal Shutdown with Hysteresis
• Voltage Waveshaping of Bus Output Driver
• 40 V Max VBAT Capability
• Pb-Free Packaging Designated by Suffix Code EF
Document Number: MC33390
Rev 7.0, 11/2006
33390
J-1850 SERIAL TRANSCEIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-LEAD SOICN
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33390D/DR2
-40°C to 125°C
MCZ33390EF/R2
8 SOICN
VPWR
33390
+VBAT
BUS
SLEEP
LOAD
MCU
TX
RX
GND
4X/Loop
Primary
Node
Secondary
Nodes
Figure 1. 33390 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.

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MCZ33390 equivalent
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V VBAT 16 V, -40°C TA 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol Min Typ Max Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 to GND, 3.6 nF to GND
BUS Load = 257 to GND, 20.2 nF to GND
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
Sleep State Battery Current
VSLEEP = 0 V
IBAT (OP1)
IBAT (OP2)
IBAT(BUS L1)
IBAT(BUS L2)
IBAT(SLEEP)
3.0
22.4
1.1
6.4
38.2
11.5
32
3.0
8.5
65
mA
mA
µA
BUS
BUS Input Receiver Threshold (6)
Threshold High (Bus Increasing until Rx 3.0 V)
Threshold Low (Bus Decreasing until Rx 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
BUS-Out Voltage (257 Ω ≤ RBUS(L) to GND 1380 )
8.2 V VBAT 16 V, Tx = 5.0 V
4.25 V VBAT 8.2 V, Tx = 5.0 V
Tx = 0 V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V VBUS 4.8 V
BUS Leakage Current
-2.0 V VBUS 0 V
0 V VBUS VBAT
BUS Thermal Shutdown (7) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS 2.5 V
BUS Thermal Shutdown Hysteresis (8)
TBUS(LIM) - TBUS(REEN)
BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 µA) (see
Figure 4)
-18 V VBUS 9.0 V
-18 V VLOAD 9.0 V
VBUS(IH)
VBUS(IL)
BUSTH(SLEEP)
VBUS(HYST)
4.25
2.4
0.1
VBUS (OUT1)
VBUS (OUT2)
VBUS (OUT3)
IBUS (SHORT)
6.25
VBAT - 1.6
60
IBUS (LEAK1)
IBUS (LEAK2)
TBUS (LIM)
TBUS (LI MHYS)
-500
150
10
IBUS (LOSS)
ILOAD (LOSS)
3.9
3.7
3.0
0.2
6.9
0.27
129
-55
189
170
12
0.00
0.00
3.5
3.4
0.6
8.0
VBAT
0.7
170
500
190
15
0.1
0.1
V
V
mA
µA
°C
°C
mA
Notes
6. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
7. Device characterized but not production tested for thermal shutdown.
8. Device characterized but not production tested for thermal shutdown hysteresis.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33390
5


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