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PDF MC33984B Data sheet ( Hoja de datos )
| Número de pieza | MC33984B | |
| Descripción | Dual Intelligent High-Current Self Protected Silicon High-Side Switch | |
| Fabricantes | Freescale Semiconductor | |
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Advance Information
Document Number: MC33984
Rev. 9.0, 1/2007
Dual Intelligent High-Current
Self-Protected Silicon
High-Side Switch (4.0 mΩ)
33984B
The 33984 is a dual self-protected 4.0 mΩ silicon switch used to
replace electromechanical relays, fuses, and discrete devices in
power management applications. The 33984 is designed for harsh
environments, and it includes self-recovery features. The device is
suitable for loads with high inrush current, as well as motors and all
types of resistive and inductive loads.
Programming, control, and diagnostics are implemented via the
Serial Peripheral Interface (SPI). A dedicated parallel input is
available for alternate and pulse-width modulation (PWM) control of
each output. SPI-programmable fault trip thresholds allow the device
to be adjusted for optimal performance in the application.
The 33984 is packaged in a power-enhanced 12 x 12 nonleaded
PQFN package with exposed tabs.
Features
• Dual 4.0 mΩ Max High-Side Switch with Parallel Input or SPI
Control
• 6.0 V to 27 V Operating Voltage with Standby Currents < 5.0 µA
• Output Current Monitoring with Two SPI-Selectable Current Ratios
• SPI Control of Overcurrent Limit, Overcurrent Fault Blanking Time,
Output-OFF Open Load Detection, Output ON/OFF Control,
Watchdog Timeout, Slew Rates, and Fault Status Reporting
• SPI Status Reporting of Overcurrent, Open and Shorted Loads,
Overtemperature, Undervoltage and Overvoltage Shutdown, Fail-
Safe Pin Status, and Program Status
• Enhanced -16 V Reverse Polarity VPWR Protection
HIGH-SIDE SWITCH
BOTTOM VIEW
PNA SUFFIX
98ARL10521D
16-PIN PQFN
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33984BPNA/R2 -40°C to 125°C
16 PQFN
VDD
VDD
I/O
I/O
SO
SCLK
MCU CS
SI
I/O
I/O
I/O
A/D
VDD
VPWR
33984B
VDD
VPWR
FS
WAKE
SI
SCLK
CS
SO
RST
INO
IN1
CSNS
FSI
HS1
HS0
GND
GND
LOAD
LOAD
Figure 1. 33984 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
ELECTRICAL RATINGS
Operating Voltage Range
Steady-State
VPWR
-16 to 41
V
VDD Supply Voltage
Input/Output Voltage (1)
SO Output Voltage (1)
WAKE Input Clamp Current
CSNS Input Clamp Current
Output Voltage
Positive
Negative
Output Current (2)
Output Clamp Energy (3)
ESD Voltage (4)
Human Body Model (HBM)
Charge Device Model (CDM)
Corner Pins (1, 12, 15, 16)
All Other Pins (2, 11, 13, 14)
VDD
VIN[0:1], RST, FSI
CSNS, SI, SCLK,
CS, FS
VSO
ICL(WAKE)
ICL(CSNS)
VHS
IHS[0:1]
ECL[0:1]
VESD1
VESD3
-0.3 to 5.5
-0.3 to 7.0
-0.3 to VDD+0.3
2.5
10
41
-15
30
0.75
± 2000
±750
±500
V
V
V
mA
mA
V
A
J
V
Notes
1. Exceeding this voltage limit may cause permanent damage to the device.
2. Continuous high-side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output
current using package thermal resistance is required.
3. Active clamp energy using single-pulse method (L = 16 mH, RL = 0, VPWR = 12 V, TJ = 150°C).
4. ESD1 testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω); ESD3 testing is
performed in accordance with the Charge Device Model (CDM), Robotic (Czap=4.0pF).
Analog Integrated Circuit Device Data
Freescale Semiconductor
33984
5
5 Page 
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min Typ Max Unit
POWER OUTPUT TIMING
Output Rising Slow Slew Rate A (DICR D3 = 0) (18)
9.0 V < VPWR < 16 V
Output Rising Slow Slew Rate B (DICR D3 = 0) (19)
9.0 V < VPWR < 16 V
Output Rising Fast Slew Rate A (DICR D3 = 1) (18)
9.0 V < VPWR < 16 V
Output Rising Fast Slew Rate B (DICR D3 = 1) (19)
9.0 V < VPWR < 16 V
Output Falling Slow Slew Rate A (DICR D3 = 0) (18)
9.0 V < VPWR < 16 V
Output Falling Slow Slew Rate B (DICR D3 = 0) (19)
9.0 V < VPWR < 16 V
Output Falling Fast Slew Rate A (DICR D3 = 1) (18)
9.0 V < VPWR < 16 V
Output Falling Fast Slew Rate B (DICR D3 = 1) (19)
9.0 V < VPWR < 16 V
Output Turn-ON Delay Time in Fast/Slow Slew Rate (20)
DICR = 0, DICR = 1
Output Turn-OFF Delay Time in Slow Slew Rate Mode (21)
DICR = 0
Output Turn-OFF Delay Time in Fast Slew Rate Mode (21)
DICR = 1
SRRA_SLOW
SRRB_SLOW
SRRA_FAST
SRRB_FAST
SRFA_SLOW
SRFB_SLOW
SRFA_FAST
SRFB_FAST
t DLY(ON)
t DLY_SLOW(OFF)
t DLY_FAST(OFF)
0.2
0.03
0.4
0.03
0.2
0.03
0.8
0.1
1.0
20
10
0.6
0.1
1.0
0.1
0.6
0.1
2.0
0.35
15
230
60
V/µs
1.2
V/µs
0.3
V/µs
4.0
V/µs
1.2
V/µs
1.2
V/µs
0.3
V/µs
4.0
V/µs
1.2
µs
100
µs
500
µs
200
Direct Input Switching Frequency (DICR D3 = 0)
f PWM
– 300 – Hz
Notes
18. Rise and Fall Slew Rates A measured across a 5.0 Ω resistive load at high-side output = 0.5 V to VPWR-3.5 V. These parameters are
guaranteed by process monitoring.
19. Rise and Fall Slew Rates B measured across a 5.0 Ω resistive load at high-side output = VPWR-3.5 V to VPWR-0.5 V. These parameters
are guaranteed by process monitoring.
20. Turn-ON delay time measured from rising edge of IN[0:1] signal that would turn the output ON to VHS[0:1] = 0.5 V with RL = 5.0 Ω resistive
load.
21. Turn-OFF delay time measured from falling edge that would turn the output OFF to VHS[0:1] = VPWR -0.5 V with RL = 5.0 Ω resistive load.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33984
11
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| PDF Descargar | [ Datasheet MC33984B.PDF ] | |
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