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PDF 33990 Data sheet ( Hoja de datos )
| Número de pieza | 33990 | |
| Descripción | Enhanced Class B Serial Transceiver | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Advance Information
Document Number: MC33990
Rev 3.0, 11/2006
Enhanced Class B Serial
Transceiver
33990
The 33990 is a serial transceiver designed to provide bi-directional
half-duplex communication meeting the automotive SAE Standard J-
1850 Class B Data Communication Network Interface specification. It
is designed to interface directly to on-board vehicle microcontrollers
and serves to transmit and receive data on a single-wire bus at data
rates of 10.4 kbps using Variable Pulse Width Modulation (VPWM).
The 33990 operates directly from a vehicle's 12 V battery system and
functions in a true logic fashion as an I/O interface between the
microcontroller's 5.0 V CMOS logic level swings and the required 0 V
to 7.0 V waveshaped signal swings of the bus. The bus output driver
is short circuit current limited.
Features
• Designed for SAE J-1850 Class B Data Rates
• Full Operational Bus Dynamics Over a Supply Voltage of 9.0 V
to 16 V
• Ambient Operating Temperature of -40°C to 125°C
• Interfaces Directly to Standard 5.0 V CMOS Microcontroller
• BUS Pin Protected Against Shorts to Battery and Ground
• Thermal Shutdown with Hysteresis
• Voltage Waveshaping of Bus Output Driver
• Internally Reverse Battery Protected
• 40 V Max VBAT Capability
• Pb-Free Packaging Designated by Suffix Code EF
J-1850 SERIAL TRANSCEIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33990D/DR2
MCZ33990EF/R2
-40°C to 125°C
8 SOICNN
VBAT
33990
+VBAT
BUS
Primary
Node
MCU
SLEEP
TX LOAD
RX
4X/LOOP
GND
Secondary
Nodes
Figure 1. 33990 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 Ω to GND, 3.6 nF to GND
BUS Load = 257 Ω to GND, 20.2 nF to GND
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
Sleep State Battery Current
VSLEEP = 0 V
IBAT (OP1)
IBAT (OP2)
IBAT(BUS L1)
IBAT(BUS L2)
IBAT(SLEEP)
–
–
–
–
–
3.0
22.4
1.1
6.4
38.2
11.5
32
mA
mA
3.0
8.5
µA
65
BUS
BUS Input Receiver Threshold (7)
Threshold High (Bus Increasing until Rx ≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx ≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
BUS-Out Voltage (Tx = 5.0 V, 257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω)
8.2 V ≤ VBAT ≤ 16 V
4.25 V ≤ VBAT ≤ 8.2 V
Tx = 0 V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V
BUS Leakage Current
-2.0 V ≤ VBUS ≤ 0 V (≥ 2.0 ms after Tx Falls to 0 V)
0 V ≤ VBUS ≤ VBAT
0 V ≤ VBUS ≤ 8.0 V
BUS Thermal Shutdown (8) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS ≤ 2.5 V
BUS Thermal Shutdown Hysteresis (9)
TBUS(LIM) - TBUS(REEN)
LOAD Input Current with Loss of Ground
VLOAD = -18 V (see Figure 4)
BUS Input Current with Loss of Ground
VBUS = -18 V (see Figure 4)
VBUS(IH)
VBUS(IL)
BUSTH(SLEEP)
VBUS(HYST)
4.25
–
2.4
0.1
3.9
3.7
3.0
0.2
VBUS (OUT1)
VBUS (OUT2)
VBUS (OUT3)
IBUS (SHORT)
6.25
VBAT - 1.6
–
60
6.9
–
0.27
129
IBUS (LEAK1)
IBUS (LEAK2)
IBUS (LEAK3)
TBUS (LIM)
TBUS (LI MHYS)
ILOAD (LOG)
IBUS (LOG)
-0.5
-0.5
–
150
10
-1.0
-1.0
-0.055
0.5
0.25
170
12
–
–
–
3.5
3.4
0.6
8.0
VBAT
0.7
170
0.5
1.0
0.5
190
15
0.1
0.1
V
V
mA
mA
°C
°C
mA
mA
Notes
7. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
8. Device characterized but not production tested for thermal shutdown.
9. Device characterized but not production tested for thermal shutdown hysteresis.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33990
5
5 Page 
31 Secondary Nodes
10.6 kΩ 470 pF
342 Ω 14570 pF
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
Figure 13. Maximum Bus Load
Table 6. Class B Bus Capacitance and Resistance Expressions
Level
Capacitance
Resistance to Ground
Minimum
Maximum
(3.3 x 0.9) + (0.47 x 0.9) = 3.39 nF
(3.3 x 1.1) + 25(0.47 x 1.1) = 16.55 nF
(1.5 x 0.95) || (10.6 x 0.95) / 25 = 314 Ω
(1.5 x 1.05) || (10.6 x 1.05) = 1.38 kΩ
Analog Integrated Circuit Device Data
Freescale Semiconductor
33990
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 33990.PDF ] | |
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