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부품번호 | MC33990 기능 |
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기능 | Enhanced Class B Serial Transceiver | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 16 페이지수
www.FDraetaeSshceaelte4US.ceommiconductor
Advance Information
Document Number: MC33990
Rev 3.0, 11/2006
Enhanced Class B Serial
Transceiver
33990
The 33990 is a serial transceiver designed to provide bi-directional
half-duplex communication meeting the automotive SAE Standard J-
1850 Class B Data Communication Network Interface specification. It
is designed to interface directly to on-board vehicle microcontrollers
and serves to transmit and receive data on a single-wire bus at data
rates of 10.4 kbps using Variable Pulse Width Modulation (VPWM).
The 33990 operates directly from a vehicle's 12 V battery system and
functions in a true logic fashion as an I/O interface between the
microcontroller's 5.0 V CMOS logic level swings and the required 0 V
to 7.0 V waveshaped signal swings of the bus. The bus output driver
is short circuit current limited.
Features
• Designed for SAE J-1850 Class B Data Rates
• Full Operational Bus Dynamics Over a Supply Voltage of 9.0 V
to 16 V
• Ambient Operating Temperature of -40°C to 125°C
• Interfaces Directly to Standard 5.0 V CMOS Microcontroller
• BUS Pin Protected Against Shorts to Battery and Ground
• Thermal Shutdown with Hysteresis
• Voltage Waveshaping of Bus Output Driver
• Internally Reverse Battery Protected
• 40 V Max VBAT Capability
• Pb-Free Packaging Designated by Suffix Code EF
J-1850 SERIAL TRANSCEIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33990D/DR2
MCZ33990EF/R2
-40°C to 125°C
8 SOICNN
VBAT
33990
+VBAT
BUS
Primary
Node
MCU
SLEEP
TX LOAD
RX
4X/LOOP
GND
Secondary
Nodes
Figure 1. 33990 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
VBAT DC Supply Voltage (1)
Input I/O Pins (2)
BUS and LOAD Outputs
ESD Voltage
Human Body Model (3)
Machine Model (4)
VBAT
VI/O(CPU)
VBUS
VESD1
VESD2
-16 to 40
-0.3 to 7.0
-2.0 to 16
±2000
±200
V
V
V
V
Storage Temperature
TSTG
-65 to 150
°C
Operating Ambient Temperature
TA
-40 to 125
°C
Operating Junction Temperature
Peak Package Reflow Temperature During Reflow (5), (6)
TJ
TPPRT
-40 to 150
Note 6.
°C
°C
Thermal Resistance (Junction-to-Ambient)
RθJ-A
180 °C/W
Notes
1. An external series diode must be used to provide reverse battery protection of the device.
2. SLEEP, TX, RX, and 4X/LOOP are normally connected to a microcontroller.
3. ESD1 testing is performed in accordance with the Human Body Model (CZAP=100 pF, RZAP=1500 Ω).
4. ESD2 testing is performed in accordance with the Machine Model (CZAP=200 pF, RZAP=0 Ω).
5. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
6. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
33990
4
Analog Integrated Circuit Device Data
Freescale Semiconductor
4페이지 ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
BUS Voltage Rise Time (10) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 6)
BUS Load = 3,300 pF and 1.38 kΩ to GND
BUS Load = 16,500 pF and 300 Ω to GND
BUS Voltage Fall Time (10) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 6)
BUS Load = 3,300 pF and 1.38 kΩ to GND
BUS Load = 16,500 pF and 300 Ω to GND
trise (BUS)
tfall (BUS)
9.0
9.0
9.0
9.0
11.15
11.86
10.50
11.17
µs
15
15
µs
15
15
Pulse Width Distortion Time (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 7)
tpwd (BUS)
µs
BUS Load = 3,300 pF and 1.38 kΩ to GND
35 62 93
Propagation Delay
TX Threshold to RX Threshold
tpd (BUS)
µs
–
17.7
25
TX
TX to BUS Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (Figure 8)
4X Mode
Normal Mode
tTxDelay
–
µs
2.6 4.0
13 17.3 24
SLEEP to Tx Setup Time (Figure 8)
RX
tSLEEPTxSU
80
40
– µs
RX Output Delay Time (TX = 2.5 V to VBUS = 3.875 V) (see Figure 9)
Low-to-Output High
High-to-Output Low
RX Output Transition Time (CRx = 50 pF to GND, 10% and 90% Points)
(see Figure 10)
Low-to-Output High
High-to-Output Low
Rx Output Transition Time (11) (CRx = 50 pF to GND, SLEEP = 0 V, 10% and
90% Points) (see Figure 10)
Low-to-Output High
High-to-Output Low
tRxDelay / L–H
tRxDelay / H–L
tRxTrans / L–H
tRxTrans /H–L
tRxTrans / L–H
tRxTrans /H–L
–
–
–
–
–
–
0.11
0.38
0.34
0.08
0.32
0.08
µs
2.0
2.0
µs
1.0
1.0
µs
5.0
5.0
Notes
10. Typical is the parameter's approximate average value with VBAT = 13 V, TA = 25°C.
11. RX Output Transition Time from a sleep state.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33990
7
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