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PDF GM1188 Data sheet ( Hoja de datos )
| Número de pieza | GM1188 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/10/19B
G M 11 8 8
PNP SILICON EPITAXIAL TRANSISTOR
Description
The GM1188 is designed for medium power amplifier applications.
Features
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Complementary pair with GM1766
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
*When mounted on a 40x40x0.7mm ceramic board.
Ratings
+150
-55~+150
-40
-32
-5
-2
0.5 (2.0*)
Unit
V
V
V
A
W
Electrical Characteristics(Ta = 25 ,unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-40 - - V IC=-50uA , IE=0
-32 - - V IC=-1mA, IB=0
-5 - - V IE=-50uA ,IC=0
- - -1 uA VCB=-20V, IE=0
- - -1 uA VEB=-4V, IC=0
-
-500
-800
mV IC=-2A, IB=-200mA
82 - 390
VCE=-3V, IC=-500mA
- 150 - MHz VCE=-5V, IC=-500mA, f=30MHz
- 50 - pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
2%
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GM1188.PDF ] | |
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