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PDF DXTB772 Data sheet ( Hoja de datos )
| Número de pieza | DXTB772 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXTB772
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage amplifier, voltage
regulator, DC-DC converter and driver.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-30
Emitter-Base Voltage
VEBO
-5
Collector Current (continuous)
IC
-3
Collector Current (pulse)(1)
IC -7
Total Power Dissipation(2)
PD 1
Total Power Dissipation(3)
PD 2
Total Power Dissipation(4)
PD 1.5
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
A
W
W
W
oC
oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -40
-
-
Collector-Emitter Breakdown Voltage
BVCEO -30
-
-
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(5)
Base-Emitter Saturation Voltage(5)
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
-5
-
-
-
-
--
- -1
- -1
-0.3 -0.5
-1 -2
DC Current Gain(5)
hFE1
hFE2
30 -
100 160
-
500
Transition Frequency
fT - 80 -
Output Capacitance
Cob - 55 -
(1)Single pulse PW=1ms
(2)When tested in free air condition, without heat sinking.
(3)When mounted on a 40x40X1mm ceramic board.
(4)Printed circuit board 2mm thick, collector plating 1cm square or larger.
(5)Pulse Test: Pulse Width 380µs, Duty Cycle 2%.
Classification of hFE2
Rank
Q
P
E
Range 100~200 160~320 250~500
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-100mA, VCE=-5V, f=100MHz
VCB=-10V, f=1MHz
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