|
|
|
부품번호 | BF1208 기능 |
|
|
기능 | Dual N-channel dual gate MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 22 페이지수
www.DataSheet4U.com
BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment
www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ Unit
225 K/W
Table 7: Static characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
amplifier B
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 kΩ
amplifier A; VDS(A) = 5 V
amplifier B; VDS(B) = 5 V
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A
amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V
VG2-S = 4 V; VG1-S(B) = 0 V;
VG1-S(A) = VDS(A) = VDS(B) = 0 V
[1] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 5 V (see Figure 3).
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] 14
[2] 9
-
-
24 mA
17 mA
- - 50 nA
- - 50 nA
- - 20 nA
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 22
4페이지 www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
001aaa556
(1)
(2)
20
(3)
10
0
0
(4)
(5)
(6)
8 16 24 32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID(A)
(mA)
16
001aac206
12
8
4
0
0 20 40 60
ID(B) (µA)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V;
VG1-S(B) = 0 V; Tj = 25 °C.
ID(B) = internal G1 current = current in pin drain (B) if
MOSFET (B) is switched off.
Fig 7. Amplifier A: drain current as a function of
internal G1 current; typical values
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 22
7페이지 | |||
구 성 | 총 22 페이지수 | ||
다운로드 | [ BF1208.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BF1201 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
BF1201R | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |