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BF1208 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BF1208은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BF1208 자료 제공

부품번호 BF1208 기능
기능 Dual N-channel dual gate MOSFET
제조업체 NXP Semiconductors
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BF1208 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment




BF1208 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6:
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ Unit
225 K/W
Table 7: Static characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
amplifier B
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 k
amplifier A; VDS(A) = 5 V
amplifier B; VDS(B) = 5 V
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A
amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V
VG2-S = 4 V; VG1-S(B) = 0 V;
VG1-S(A) = VDS(A) = VDS(B) = 0 V
[1] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 5 V (see Figure 3).
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] 14
[2] 9
-
-
24 mA
17 mA
- - 50 nA
- - 50 nA
- - 20 nA
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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BF1208 전자부품, 판매, 대치품
www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
001aaa556
(1)
(2)
20
(3)
10
0
0
(4)
(5)
(6)
8 16 24 32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID(A)
(mA)
16
001aac206
12
8
4
0
0 20 40 60
ID(B) (µA)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V;
VG1-S(B) = 0 V; Tj = 25 °C.
ID(B) = internal G1 current = current in pin drain (B) if
MOSFET (B) is switched off.
Fig 7. Amplifier A: drain current as a function of
internal G1 current; typical values
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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