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BF1210 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BF1210은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 BF1210 자료 제공

부품번호 BF1210 기능
기능 Dual N-channel dual gate MOSFET
제조업체 NXP Semiconductors
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BF1210 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment




BF1210 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Static characteristics
Conditions
Typ Unit
240 K/W
Table 7. Static characteristics
Tj = 25 °C.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
amplifier B
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V
amplifier A; VDS(A) = 5 V; RG1(A) = 59 k
amplifier B; VDS(B) = 5 V; RG1(B) = 150 k
VG2-S = 0 V; VDS(A) = VDS(B) = 0 V
amplifier A; VG1-S(A) = 5 V
amplifier B; VG1-S(B) = 5 V
VG2-S = 4 V; VDS(A) = VDS(B) = 0 V;
VG1-S(A) = VG1-S(B) = 0 V
Min Typ Max Unit
6
6
6
6
0.5
0.5
0.3
0.4
[1]
14
9
-
-
-
-
-
-
-
-
-
-
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
24 mA
17 mA
- - 50 nA
- - 50 nA
- - 20 nA
[1] RG1 connects gate1 to VGG = 5 V. See Figure 32.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8. Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS(A) = 5 V; ID(A) = 19 mA.
Symbol Parameter
Conditions
|yfs| forward transfer admittance Tj = 25 °C
Ciss(G1) input capacitance at gate1 f = 100 MHz
Ciss(G2) input capacitance at gate2 f = 100 MHz
Coss output capacitance
f = 100 MHz
Crss reverse transfer capacitance f = 100 MHz
Min Typ Max Unit
26 31 41 mS
[1] - 2.2 2.7 pF
[1] -
3.0 -
pF
[1] -
0.9 -
pF
[1] -
20 -
fF
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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BF1210 전자부품, 판매, 대치품
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
001aaf478
(1)
(2)
(3)
60
(4)
40
20
0
0
(5)
(6)
(7)
0.5 1.0 1.5 2.0
VG1-S (V)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS(A) = 5 V; Tj = 25 °C.
Fig 4. Amplifier A: gate1 current as a function of
gate1 voltage; typical values
20
ID
(mA)
16
001aaf480
12
8
4
36
Yfs
(mS)
24
001aaf479
(1)
(2)
(3)
12 (4)
(7)
0
0
(5)
(6)
12
24 36
ID (mA)
(1) VG2-S = 4.0 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3.0 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2.0 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1.0 V.
VDS(A) = 5 V; Tj = 25 °C.
Fig 5. Amplifier A: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
15
001aaf481
10
5
0
0 20 40 60
IG1 (µA)
0
012345
VGG (V)
VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 6. Amplifier A: drain current as a function of gate1
current; typical values
VDS(A) = 5 V; VG2-S = 4 V; RG1(A) = 59 k; Tj = 25 °C.
Fig 7. Amplifier A: drain current as a function of gate1
supply voltage (VGG); typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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