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부품번호 | BLA1011-200 기능 |
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기능 | Avionics LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1: Typical performance
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical
values.
Mode of operation
Conditions
VDS PL Gp ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
Pulsed class-AB:
tp = 50 µs; δ = 2 %
36 200 15 50 35 6
1030 MHz to 1090 MHz tp = 128 µs; δ = 2 % 36 250 14 50 35 6
tp = 340 µs; δ = 1 % 36 250 14 50 35 6
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an IDq of 150 mA:
x Load power ≥ 200 W
x Gain ≥ 13 dB
x Efficiency ≥ 45 %
x Rise time ≤ 50 ns
x Fall time ≤ 50 ns
s High power gain
s Easy power control
s Excellent ruggedness
s Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
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Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20
Gp
(dB)
15
Gp
10
ηD
5
mgw033
80
ηD
(%)
60
40
20
250
PL
(W)
200
150
100
50
mgw034
00
0 50 100 150 200 250
PL (W)
0
02468
PD (W)
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs;
δ=2%
Fig 1. Power gain and drain efficiency as functions of
load power; typical values
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs;
δ=2%
Fig 2. Load power as a function of drive power;
typical values
20
Gp
(dB)
16
12
IDq = 1.5 A
150 mA
mgw035
250
PL
(W)
200
150
mgw036
20
Gp
(dB)
16
Gp
12
PL
8 100 8
4 50 4
0
0 50 100 150 200 250
PL (W)
00
01 234 5
VGS (V)
VDS = 36 V; f = 1060 MHz; tp = 50 µs; δ = 2 %
Fig 3. Power gain as a function of load power; typical
values
VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz;
tp = 50 µs; δ = 2 %
Fig 4. Load power and power gain as functions of
gate-source voltage; typical values
9397 750 14634
Product data sheet
Rev. 08 — 26 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 13
4페이지 www.DataSheet4U.com
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Table 8: List of components (see Figure 8)
Component Description
C1 multilayer ceramic chip capacitor
C2 multilayer ceramic chip capacitor
C3 multilayer ceramic chip capacitor
C4, C7
multilayer ceramic chip capacitor
C5 multilayer ceramic chip capacitor
C6 electrolytic capacitor
C8 multilayer ceramic chip capacitor
C9 multilayer ceramic chip capacitor
C10 multilayer ceramic chip capacitor
C11 electrolytic capacitor
L1 Ω-shaped enamelled 1 mm copper wire
R1 metal film resistor
R2 SMD 0508 resistor
Value
[1] 39 pF
[2] 4.3 pF
[1] 11 pF
[1] 62 pF
[1] 100 pF
47 µF; 20 V
[2] 20 pF
[1] 47 pF
[3] 1.2 nF
47 µF; 63V
301 Ω
18 Ω
Dimensions
length = 38 mm
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 700 or capacitor of same quality.
9397 750 14634
Product data sheet
Rev. 08 — 26 October 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 13
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BLA1011-200 | Avionics LDMOS transistor | NXP Semiconductors |
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