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부품번호 | BLC6G20-110 기능 |
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기능 | UHF power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
www.DataSheet4U.com
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL
Gp ηD ACPR400 ACPR600
(MHz)
(V) (W)
(dB) (%) (dBc)
(dBc)
CW
1930 to 1990 28 100
17 51 -
-
GSM EDGE
1930 to 1990 28 48 (AV) 17.5 40 −60
−70
2-carrier W-CDMA 1930 to 1990 28 25 (AV) 18 32 -
-
EVM
(%)
-
2.1
-
IMD3
(dBc)
-
-
−37 [1]
ACPR
(dBc)
-
-
−40 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
x Output power = 25 W (AV)
x Gain = 18 dB
x Efficiency = 32 %
x IMD3 = −37 dBc
x ACPR = −40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use
www.DataSheet4U.com
Philips Semiconductors
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D1
L
H U2
A
U1 B
q Cc
1
w1 M A M B M
p
3
2
b w2 M C M
E1 E
Q
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
c
D D1 E E1 F H L p Q q U1 U2 w1 w2
mm
4.1 12.83 0.17
3.3 12.57 0.14
19.9 20.42 9.53 9.78 1.14 19.94 5.3
19.7 20.12 9.27 9.53 0.89 18.92 4.5
3.38
3.12
1.75
1.50
27.94
34.16
33.91
9.91
9.65
inches
0.161
0.130
0.505
0.495
0.0065
0.0055
0.785 0.804
0.775 0.792
0.375
0.365
0.385
0.375
0.045
0.035
0.785
0.745
0.209
0.177
0.133
0.123
0.069
0.059
1.100
1.345
1.335
0.390
0.380
0.25
0.01
0.6
0.023
OUTLINE
VERSION
SOT895-1
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-22
05-06-28
Fig 1. Package outline SOT895-1
BLC6G20-110_6G20LS-110_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
10. Revision history
Table 9: Revision history
Document ID
Release date Data sheet status
BLC6G20-110_6G20 20060130
LS-110_1
Objective data sheet
Change notice Doc. number
--
Supersedes
-
BLC6G20-110_6G20LS-110_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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BLC6G20-110 | UHF power LDMOS transistor | NXP Semiconductors |
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