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PDF BLF2022-70 Data sheet ( Hoja de datos )
| Número de pieza | BLF2022-70 | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2022-70
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Jul 04
2003 Feb 24
1 page  
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-70
15
handbook, halfpage
Gp
(dB)
10
Gp
MGW534
30
ηD
(%)
20
ηD
0
handbook, halfpage
dim
(dBc)
− 20
MGW535
0
ACLR
(dBc)
− 20
5 10
00
30 32 34 36 38 40
PL(AV) (dBm)
VDS = 28 V; IDQ = 450 mA; Th ≤ 25 °C;
f1 = 2135 MHz; f2 = 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.6 Power gain and drain efficiency as functions
of average load power; typical values.
−40 dim
ACLR
− 40
−60 −60
30 32 34 36 38 40
PL(AV) (dBm)
VDS = 28 V; IDQ = 450 mA; Th ≤ 25 °C;
f1 = 2135 MHz; f2 = 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.7 Intermodulation distortion and adjacent
channel power ratio as functions of average
load power; typical values.
2003 Feb 24
5
5 Page 
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
NOTES
Product specification
BLF2022-70
2003 Feb 24
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF2022-70.PDF ] | |
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