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부품번호 | BLF2022-90 기능 |
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기능 | UHF power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2022-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 09
2003 Feb 24
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-90
15
handbook, halfpage
Gp
(dB)
14
MLD837
50
ηD
(%)
ηD 40
13 Gp 30
12 20
11 10
10 0
0 40 80 120
PL (PEP) (W)
VDS = 28 V; IDQ = 750 mA; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
handbook, h0alfpage
dim
(dBc)
−20
−40
−60
MLD838
d3
d5
d7
−80
0 40 80 120
PL (PEP) (W)
VDS = 28 V; IDQ = 750 mA; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
15
handbook, halfpage
Gp
(dB)
14
Gp
(1)
(2)
13
(3)
12
(4)
(5) (6)
MLD839
50
ηD
(%)
ηD 40
30
20
11 10
10 0
0 40 80 120
PL (PEP) (W)
VDS = 28 V; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 900 mA.
(2) IDQ = 750 mA.
(3) IDQ = 600 mA.
(4) IDQ = 600 mA.
(5) IDQ = 750 mA.
(6) IDQ = 900 mA.
Fig.4 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
handbook, h0alfpage
dim
(dBc)
−20
−40 (1)
(2)
(3)
−60
MLD840
−80
0
40 80 120
PL (PEP) (W)
VDS = 28 V; Th = 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 600 mA. (2) IDQ = 900 mA.
(3) IDQ = 750 mA.
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Feb 24
4
4페이지 www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-90
List of components (See Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
C1, C2, C6, C7 Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3, C8
multilayer ceramic chip capacitor; note 1 12 pF
C4, C9
C5, C12
C10
multilayer ceramic chip capacitor; note 2 12 pF
electrolytic capacitor
10 µF; 100 V
multilayer ceramic chip capacitor; note 1 1 nF
C11
multilayer ceramic chip capacitor
100 nF
C13 tantalum SMD capacitor
4.5 µF; 50 V
C14 electrolytic capacitor
100 µF; 63 V
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10, L11
L12
L13
L14
L15
L16
L17
L18
L19
L20
R1, R2
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
metal film resistor
50 Ω
14.5 Ω
50 Ω
6Ω
50 Ω
9.5 Ω
50 Ω
9.8 Ω
24.4 Ω
5.1 Ω
25.4 Ω
5.7 Ω
25.4 Ω
11.3 Ω
50 Ω
16.1 Ω
50 Ω
50 Ω
50 Ω
10 Ω, 0.6 W
DIMENSIONS
2.9 × 2.4 mm
4 × 11.7 mm
3.7 × 2.4 mm
2 × 30.8 mm
3.6 × 2.4 mm
3 × 18.8 mm
7.8 × 2.4 mm
4 × 18.3 mm
5 × 6.3 mm
7 × 37 mm
10.1 × 6 mm
2.4 × 32.8 mm
7.4 × 6 mm
2.5 × 15.6 mm
10.8 × 2.4 mm
3 × 10.4 mm
2.3 × 2.4 mm
3 × 2.4 mm
5.5 × 2.4 mm
CATALOGUE NO.
2222 037 59109
2222 581 16641
2222 037 58101
4330 030 36301
2322 156 11009
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2003 Feb 24
7
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