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PDF L6316 Data sheet ( Hoja de datos )
| Número de pieza | L6316 | |
| Descripción | 4-CHANNEL LOW POWER PREAMPLIFIER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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L6316
4-CHANNEL LOW POWER PREAMPLIFIER
DATA BRIEF
1 FEATURES
■ Dual Power Supplies of +5V, 10% and -3v, 6%
■ Low Power consumption; 980 mW @ 800Mb/s
(Single Head 100% Write mode duty cycle,
Random pattern, Iw = 40mA, Max Ovs).
■ Flip Chip package.L6316
■ Differential Voltage Bias / Voltage Sense
architecture. Current Bias available
■ Programmable read input differential
impedance.
■ Selectable read path bandwidth from 200 to
>600 MHz (Rmr=40Ω). (Parameter dependent
on interconnect)
■ Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with
RMR=40Ω).
■ Noise Figure of merit; 2.2 dB (Rmr=40Ω)
■ MR bias voltage programmable from 70 to 225
mV nom. (5 bits) (7.2mA max).
■ MR bias current programmable from 0.65 to
7.2 mA nom. (5 bits) (225mV max).
■ Read input stage optimized for MR resistance
from 20 to 70 Ohm.
■ Programmable read voltage gain of 37, 40, 43,
46 dB Rmr = 40Ω, Rload = 100Ω
■ Fully Differential write driver: Programmable
overshoot amplitude (3bits) and duration (2bits).
■ Write current rise/fall time with custom head and
interconnect model 140 pS at 40 mA (10% to
90%) (Steady state to steady state)
■ Write current amplitude programmable (5 bits) 0
to 62 mA (0-pk).
■ Bi-directional 16-bit serial interface 2.5V and
3.3V CMOS compatible.
■ 2-pin (RXW and TFI), 2 bits mode selection
(WAKE, ENTFI).
■ All control signals are 2.5 & 3.3V CMOS
compatible.
■ Analog buffered head voltage ABHV (gain of 5)
■ Automatic digital MR resistance measurement
(7 bits).
■ Read head open detection, Read head shorted
detection.
■ Write head open or shorted to ground, Writer to
Reader short, write data frequency too low
detection.
■ SAFEDETECT method for write fault detection.
Figure 1. Package
Flip Chip
Table 1. Order Codes
Part Number
L6316
Package
Flip Chip
■ Low VCC or VEE supply & die over temperature
detect, Analog Temperature Measurement.
■ Fast write-to-read recovery 150nS (max) (same
head).
■ Head-to-head switch in read mode 1.5us (nom).
■ Zero MR bias, very low power (43mW) idle mode
with fast recovery to read mode 1.5us (nom).
■ MR bias switching without overshoot for head
protection.
■ Read-to-Write switching 50nS (max) (same
head).
■ ESD diodes for MR head protection
2 DESCRIPTION
The L6316 is a BICMOS Silicon Germanium inte-
grated circuit differential preamplifier. It is de-
signed for use with four-terminal MR read and in-
ductive write heads. In read mode, the device
consists of a fully differential amplifier, offering;
voltage or current bias, voltage-sense input, pro-
grammable input impedance, low noise and high
bandwidth. In write mode, it includes fast current
switching differential write drivers, which support
data rates up to 1200 Mb/s.
This preamplifier provides programmable read
voltage or current bias and write current (5 bit
DACs for the read bias and for the write current),
fault detection circuitry and servo track writing fea-
tures. Read amplifier gain, low corner frequency,
and write current wave shape are adjustable. The
amplitude and duration of the overshoot are sepa-
rately programmable through a 16-bit bi-direction-
al serial interface (SEN, SDATA, and SCLK). The
device operates from +5V and -3V supplies.
September 2004
This is preliminary information on a new product now in development. Details are subject to change without notice.
Rev. 1
1/6
1 page  
Table 3. Revision History
Date
Revision
September 2004
1
Description of Changes
First Issue in EDOCS dms.
L6316
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet L6316.PDF ] | |
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