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부품번호 | KHB2D0N60P1 기능 |
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기능 | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor | ||
제조업체 | KEC semiconductor | ||
로고 | |||
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TECHNICAL DATA
KHB2D0N60P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 2.0A
Drain-Source ON Resistance :
RDS(ON)=5.0 @VGS = 10V
Qg(typ.) = 10.9nC
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB2D0N60P1 KHB2D0N60F1
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
2.0 2.0*
1.2 1.2*
8.0 8.0*
120
5.4
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
54
0.43
23 W
0.18 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
2.32
5.5 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
0.5
62.5
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
A
E
P
K
L
D
MM
N 123
TO-220AB
F
B
G
C
O
JQ
H
1. GATE
2. DRAIN
3. SOURCE
TO-220IS
D
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
G
2006. 1. 13
Revision No : 0
S
1/7
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KHB2D0N60P1/F1
700
600
500
400
300
200
100
0
10-1
C - VDS
Frequency = 1MHz
Ciss
Coss
Crss
100 101
Drain - Source Voltage VDS (V)
Safe Operation Area
Operation in this
101 area is limited by RDS(ON)
100µs
100 1µs
10µs
10-1
DC
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
10-2
100 101
102
103
Drain - Source Voltage VDS (V)
(KHB2D0N60P1)
2.0
1.6
1.2
0.8
0.4
0.0
25
ID - Tj
50 75 100 125
Junction Temperature Tj ( C)
150
2006. 1. 13
Revision No : 0
12
ID=2.0A
10
8
6
Qg - VGS
VDS = 120V
VDS = 300V
VDS = 480V
4
2
0
02468
Gate - Charge Qg (nC)
10
Safe Operation Area
101
100
Operation in this
area is limited by RDS(ON)
100 µs
10 µs 1µs
100 µs
DC
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
100 101
102
103
Drain - Source Voltage VDS (V)
(KHB2D0N60F1)
4/7
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KHB2D0N60P1/F1
- Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2006. 1. 13
Revision No : 0
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부품번호 | 상세설명 및 기능 | 제조사 |
KHB2D0N60P | (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor | KEC semiconductor |
KHB2D0N60P1 | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor | KEC semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |