GI32C Datasheet PDF - GTM
| Part Number | GI32C | |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Manufacturers | GTM | |
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GI32C
ISSUED DATE :2005/05/12
REVISED DATE :
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GI32C is designed for use in general purpose amplifier and switching applications.
Features
*Complementary to GI31C
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-100
Collector to Emitter Voltage
VCEO
-100
Emitter to Base Voltage
VEBO
-5
Collector Current (DC)
IC -3
Collector Current (Pulse)
IC -5
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
2
15
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
-100
-
-
BVCEO
-100
-
-
BVEBO
-5 -
-
ICES
- - -20
ICEO
- - -50
IEBO
- - -1
*VCE(sat)
- - -1.2
*VBE(on)
- - -1.8
*hFE1
25 -
-
*hFE2
10 - 50
fT 3 - -
Unit
V
V
V
uA
uA
mA
V
V
MHz
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IE=-100uA, IC=0
VCE=-100V, VEB=0V
VCE=-60V, IB=0
VEB=-5V, IC=0
IC =-3A, IB=-375mA
VCE=-4V, IC=-3A
VCE=-4V, IC=-1A
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GI32C
Page: 1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GI32C electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GI32C.PDF Datasheet ] | |
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