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부품번호 | GI3403 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | GTM | ||
로고 | |||
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/25
REVISED DATE :
GI3403
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
200m
-10A
Description
The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-251 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
ID @TC=25
ID @TC=70
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-10
-8.6
-48
36.7
0.29
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
3.4
110
Unit
/W
/W
GI3403
Page: 1/4
ISSUED DATE :2005/02/25
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI3403
Page: 4/4
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GI3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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