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Datasheet GI494 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GI494 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 11m 55A
Description
The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version ( |  GTM | mosfet |
GI4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GI405 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/12/06 REVISED DATE :
GI405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 32m -18A
Description
The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The GTM mosfet | | |
| 2 | GI40N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/25 REVISED DATE :
GI40N03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 21m 36A
The GI40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
| 3 | GI40T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GI40T 03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 25m 28A
The GI40T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
| 4 | GI41C | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GI41C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GI41C is designed for use in general purpose amplifier and switching applications. *Complementary to GI42C
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. GTM transistor | | |
| 5 | GI42C | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GI42C
Description Features
P NP EP ITAXI AL PL ANAR T RANSI STOR
The GI42C is designed for use in general purpose amplifier and switching applications. *Complementary to GI41C
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. GTM transistor | | |
| 6 | GI4672 | NPN EPITAXIAL SILICON TRANSISTOR
ISSUED DATE :2005/07/15 REVISED DATE :
GI4672
Description Features
NPN EPITAXIAL SILICON TRANSISTOR
The GI4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Pac GTM transistor | | |
| 7 | GI494 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 11m 55A
Description
The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The through-hole version ( GTM mosfet | |
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