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Número de pieza | ATR7032 | |
Descripción | High Gain Power Amplifier | |
Fabricantes | ATMEL Corporation | |
Logotipo | ||
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Features
• Frequency Range 2.4 GHz to 2.5 GHz
• Supply Voltage 2.7V to 3.6V
• 32 dB Power Gain
• 23 dBm Linear Output Power for IEEE 802.11b Mode Operation
• EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
• On-chip Power Detector with 20 dB Dynamic Range
• Power-down Mode and Biasing Control
• Input and Interstage Matching Fully On-chip
• Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm)
Applications
• IEEE 802.11b DSSS WLAN
• IEEE 802.11g OFDM WLAN
• PC Cards, PCMCIA, Access Points
• 2.4 GHz ISM Band Application
1. Description
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50Ω and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good power-
added efficiency.
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
Preliminary
Rev. 4846B–WLAN–04/05
1 page ATR7032 [Preliminary]
6. Electrical Characteristics – Unmodulated Carrier
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit Type*
2.0
Saturated output
power
For reference
PSAT
28.5
dBm
A
2.1 P1dB output power
P1dB
27
dBm
A
2.2 Harmonic rejection
POUT = 23 dBm
2fout
3fout
–45 dBc C
–30 dBc C
2.3 Small signal gain
ICQ, small signal
condition
GL 32 dB A
2.4 Gain variation
2.5 Reverse isolation
ICQ, small signal
condition
2.4 to 2.5 GHz
–40 to +85°C
ICQ, small signal
condition
Gvarfreq
Gvartemp
–1
–1.5
+1 dB
+1.5 dB
ISOr 40 dB
A
C
C
2.6 Input 50Ω VSWR
ICQ, small signal
condition
VSWRIN
2:1
C
2.7 Output 50Ω VSWR
ICQ, small signal
condition, with
external matching
VSWROUT
2:1
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
7. Electrical Characteristics – 11 Mbps CCK Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C,
11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit Type*
3.0
Maximum linear
output power
ACPR1 ≥ 33 dBc,
ACPR2 ≥ 55 dBc
PLIN
23
dBm
A
POUT = PLIN,
3.1 Linear power gain
ACPR1 ≥ 33 dBc,
GL
32 dB A
ACPR2 ≥ 55 dBc
POUT = PLIN,
3.2 Current consumption ACPR1 ≥ 33 dBc,
ACPR2 ≥ 55 dBc
ICC 220 mA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8. Electrical Characteristics – 54 Mbps OFDM Modulation
Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C,
54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM
measurement result.
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit Type*
4.0
Error vector
magnitude
POUT = 19 dBm
EVM
2.0
%A
4.1 Linear power gain
POUT = 19 dBm
GL 32 dB
4.2 Current consumption POUT = 19 dBm
ICC 150 mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
A
A
4846B–WLAN–04/05
5
5 Page ATR7032 [Preliminary]
Figure 11-7.
Typical Spectral Plot Conforming Compliance to 802.11b Spectral Mask for
11 Mbps CCK Modulation at Operating Point: POut = 23 dBm;
Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 220 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
Ref
20
1 RM *
AVG
10
0
-10
21.1 dBm
* At t 0 dB
* RBW 100 kHz
* VBW 100 kHz
* SWT 20 ms
Offset 20.8 dB
LIMIT CHECK MARG CH PWR 22.79 dBm
LINE ACPRBU_G MARG
A
TRG
LVL
-20 33 dBc
-30 EXT
-40
55 dBc
-50
-60
-70
Center 2.45 GHz
10 MHz/
Span 100 MHz
Figure 11-8. Typical Power-sweep with 54 Mbps OFDM Modulation at Operating Point:
Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA;
VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V
4.0 180
3.5 170
3.0 160
2.5 150
2.0 Itot 140
1.5
EVM
130
1.0 120
0.5 110
0.0
15
16
17 18 19
POut (dBm)
20
100
21
4846B–WLAN–04/05
11
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet ATR7032.PDF ] |
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