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PDF GISD1802 Data sheet ( Hoja de datos )
| Número de pieza | GISD1802 | |
| Descripción | PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2005/01/13
REVISED DATE :
GISD1802
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
Features
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
3
Collector Current(Pulse)
ICP
6
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.19
VBE(sat)
- 0.94
hFE1
100 -
hFE2
35 -
fT - 150
ton - 70
tstg - 650
tf - 35
Cob - 25
unless otherwise specified)
Max.
Unit
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 A VCB=40V, IE=0
1 A VEB=4V, IC=0
0.5 V IC=2A, IB=0.1A
1.2 V IC=2A, IB=0.1A
560 VCE=2V, IC=0.1A
- VCE=2V, IC=3A
-
MHZ
VCE=10V,IC=50mA
- ns See test circuit
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
Test Conditions
GISD1802
Page: 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GISD1802.PDF ] | |
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