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PDF GJ127 Data sheet ( Hoja de datos )
| Número de pieza | GJ127 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GJ127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GJ127 is designed for use in general purposes and low speed switching applications.
Features
High DC current gain
Built-in a damper diode at E-C
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25 )
PD
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55 ~ +150
-100
-100
-5
-5
20
Unit
V
V
V
A
W
Electrical Characteristics (Rating at 25 ambient temperature unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-100
-
-
V IC=-1mA, IE=0
BVCEO
BVEBO
-100
-
-
V IC=-30mA, IB=0
-5 - - V IE=-1mA, IC=0
ICBO
ICEX
IEBO
- - -10 A VCB=-100V, IE=0
- - -10 A VCE=-100V, VBE(off)=-1.5V
- - -2 mA VEB=-5V, IC=0
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
- - -2 V IC=-3A, IB=-12mA
- - -4 V IC=-5A, IB=-20mA
- - -4 V IC=-5A, IB=-50mA
*VBE(on)
*hFE1
*hFE2
- - -2.8 V VCE=-3V, IC=-3A
1 - - K VCE=-3V, IC=-500mA
1 - - K VCE=-3V, IC=-3A
Cob - - 300 pF VCB=-10V, f=0.1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GJ127
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GJ127.PDF ] | |
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