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부품번호 | GJ405 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | GTM | ||
로고 | |||
전체 4 페이지수
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GJ405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
32m
-18A
Description
The GJ405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited
for high current load applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±20
-18
-14
-40
60
0.4
61
-35
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
50
Unit
/W
/W
GJ405
Page: 1/4
ISSUED DATE :2006/12/06
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ405
Page: 4/4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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GJ405 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |