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PDF 2SK4082 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4082 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4082
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A)
• Low gate charge
QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
(Isolated TO-220)
ORDERING INFORMATION
PART NUMBER
2SK4082-S17-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 50 p/tube
PACKAGE
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
600
±30
±3.5
±14
35
2.0
150
−55 to +150
2
240
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18786EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
VGS = 10 V
5 Pulsed
4 ID = 3.5 A
3
2 1.8 A
1
0
-75
-25 25 75 125
Tch - Channel Temperature - °C
175
1000
100
10
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
tr
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4082
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1 1
Crss
10 100 1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
VDD = 450 V
500 300 V
150 V
400
12
10
8
300 VGS 6
200 4
100
0
0
VDS 2
ID = 3.5 A
0
2 4 6 8 10 12 14
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D18786EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK4082.PDF ] | |
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