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Datasheet GJ9973 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ9973 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/04/06 REVISED DATE :
GJ9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80m 14A
The GJ9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect |  GTM | mosfet |
GJ9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ90T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/02/22 REVISED DATE :2005/12/01B
GJ90T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 5m 75A
The GJ90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 2 | GJ9435 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/02/23 REVISED DATE :
GJ9435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 50m -20A
The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiv GTM mosfet | | |
| 3 | GJ9563 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/03 REVISED DATE :
GJ9563
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 40m -26A
The GJ9563 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 4 | GJ9575 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/18 REVISED DATE :
GJ9575
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-60V 90m -15A
The GJ9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 5 | GJ9585 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GJ9585
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-80V 180m -11.2A
The GJ9585 provide the designer with the best combination of fast switching, ruggedized device design and cost-effectiveness. The T GTM mosfet | | |
| 6 | GJ965 | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GJ965
Description
NP N EP ITAX I AL PL ANAR T RANSI STOR
The GJ965 is designed for use as AF output amplifier and flash unit.
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.3 GTM transistor | | |
| 7 | GJ9912 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/31 REVISED DATE :
GJ9912
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 85m 10A
The GJ9912 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effect GTM mosfet | |
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