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PDF 3NF06L Data sheet ( Hoja de datos )
| Número de pieza | 3NF06L | |
| Descripción | STN3NF06L | |
| Fabricantes | STMicroelectronics | |
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STN3NF06L
N-CHANNEL 60V - 0.07Ω - 4A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN3NF06L
60 V
< 0.1 Ω
4A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC & DC-AC COVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(••) Pulse width limited by safe operating area.
(•) Current limited by the package
December 2002
.
Value
60
60
± 16
4
2.9
16
3.3
0.026
10
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
(1) ISD ≤ 3A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STN3NF06L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 3NF06L.PDF ] | |
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