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부품번호 | STQ1NK60ZR 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 18 페이지수
STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet - production data
Features
4
3
2
1
SOT-223
TO-92 (Ammopak)
Figure 1. Internal schematic diagram
D(2,4)
G(1)
S(3)
AM01476v1
Order codes
VDS RDS(on)max ID PTOT
STN1NK60Z
600 V
STQ1NK60ZR-AP
15 Ω
3.3 W
0.3 A
3W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• ESD improved capability
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Table 1. Device summary
Marking
Package
1NK60Z
1NK60ZR
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com
Electrical characteristics
2 Electrical characteristics
STN1NK60Z, STQ1NK60ZR
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source
on- resistance
VGS= 0, ID = 1 mA
VGS = 0, VDS =600 V
VGS = 0, VDS =600 V,
TC = 125 °C
VDS = 0, VGS = ± 20 V
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 0.4 A
Min. Typ. Max. Unit
600 V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
13 15 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 0.4 A
- 0.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 25 V,
f=1 MHz
- 94
- 17.6
- 2.8
pF
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS= 0, VDS = 0 to 480 V
-
11
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480 V, ID = 0.8 A
VGS =10 V
(see Figure 19)
- 4.9 6.9 nC
-1
nC
- 2.7
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18 DocID9509 Rev 14
4페이지 STN1NK60Z, STQ1NK60ZR
Figure 8. Transconductance
Electrical characteristics
Figure 9. Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
DocID9509 Rev 14
7/18
18
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STQ1NK60ZR | N-CHANNEL MOSFET | ST Microelectronics |
STQ1NK60ZR | N-CHANNEL MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |