|
|
|
부품번호 | SPI12N50C3 기능 |
|
|
기능 | Power Transistor | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 13 페이지수
www.DataSheet4U.com
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.38
11.6
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262
P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
2
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
3
12
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP12N50C3
SPB12N50C3
SPI12N50C3
SPA12N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4579
P-TO263-3-2 Q67040-S4641
P-TO262
Q67040-S4578
P-TO220-3-31 Q67040-S4577
Marking
12N50C3
12N50C3
12N50C3
12N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B_I SPA
11.6
7
34.8
340
11.61)
71)
34.8
340
0.6 0.6
11.6
11.6
±20 ±20
±30 ±30
125 33
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-29
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS TC=25°C
ISM
VSD
trr
Qrr
Irrm
dirr/dt
VGS=0V, IF=IS
VR=400V, IF=IS ,
diF/dt=100A/µs
Tj=25°C
min.
-
Values
typ. max.
- 11.6
Unit
A
- - 34.8
- 1 1.2 V
- 380 - ns
- 5.5 - µC
- 38 - A
- 1100 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_B_I
SPA
Rth1
Rth2
Rth3
Rth4
Rth5
Rth6
0.015
0.03
0.056
0.197
0.216
0.083
0.15
0.03
0.056
0.194
0.413
2.522
K/W
Cth1
Cth2
Cth3
Cth4
Cth5
Cth6
Value
SPP_B_I
SPA
0.0001878 0.0001878
0.0007106 0.0007106
0.000988 0.000988
0.002791 0.002791
0.007285 0.007401
0.063
0.412
Unit
Ws/K
Ptot (t)
Tj R th1
C th 1
C th 2
R th ,n
Tcase External Heatsink
C th ,n
Tamb
Rev. 2.1
Page 4
2004-03-29
4페이지 SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
Ω
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.1 SPP12N50C3
Ω
1.8
1.6 4V 4.5V 5V
1.4
1.2
5.5V
6V
1.6
1.4
1.2
1
1
0.8
6.5V
0.6 8V
20V
0.40 2 4 6 8 10 12 14 16 A 20
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
40
A
25°C
32
28
24 150°C
0.8
0.6
98%
0.4 typ
0.2
0-60 -20 20
60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11.6 A pulsed
16 SPP12N50C3
V
°C 180
Tj
12
10
0,2 VDS max
0,8 VDS max
20 8
16 6
12
4
8
42
00 1 2 3 4 5 6 7 8 V 10
VGS
Rev. 2.1
Page 7
00 10 20 30 40 50 nC 70
QGate
2004-03-29
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ SPI12N50C3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SPI12N50C3 | Cool MOS Power Transistor | Infineon Technologies |
SPI12N50C3 | Power Transistor | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |