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PDF GSS4503 Data sheet ( Hoja de datos )
| Número de pieza | GSS4503 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | GTM | |
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Pb Free Plating Product
ISSUED DATE :2005/07/29
REVISED DATE :2005/09/29B
GSS4503
N-CH BVDSS 30V
N-CH RDS(ON) 28m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
6.9A
-30V
N-CH RDS(ON) 36m
Description
N-CH ID
-6.3A
The GSS4503 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
30 -30
20 20
6.9 -6.3
5.5 -5.0
30 -30
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4503
Page: 1/7
1 page  
N-Channel
ISSUED DATE :2005/07/29
REVISED DATE :2005/09/29B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
GSS4503
Fig 12. Gate Charge Waveform
Page: 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GSS4503.PDF ] | |
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