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Número de pieza | GSS4532 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | GTM | |
Logotipo | ||
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Pb Free Plating Product
ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
GSS4532
N-CH BVDSS 30V
N-CH RDS(ON) 50m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
5A
-30V
N-CH RDS(ON) 70m
Description
N-CH ID
-4A
The GSS4532 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,4
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
30 -30
20 20
5 -4
4 -3.2
20 -20
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4532
Page: 1/9
1 page N-Channel
ISSUED DATE :2005/07/01
REVISED DATE :2005/09/29B
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
GSS4532
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Page: 5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet GSS4532.PDF ] |
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