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부품번호 | GSS9510 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | GTM | ||
로고 | |||
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/18
REVISED DATE :
GSS9510
N-CH BVDSS 30V
N-CH RDS(ON) 28m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
6.9A
-30V
N-CH RDS(ON) 55m
Description
N-CH ID
-5.3A
The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
30 -30
±20 ±20
6.9 -5.3
5.5 -4.2
30 -30
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS9510
Page: 1/7
Characteristics Curve N-Channel
ISSUED DATE :2005/11/18
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSS9510
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/7
4페이지 P-Channel
ISSUED DATE :2005/11/18
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS9510
Page: 7/7
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GSS9510 | Power MOSFET ( Transistor ) | GTM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |