(PDF) GSS9962 Datasheet - Power MOSFET ( Transistor )

Número de pieza	GSS9962
Descripción	Power MOSFET ( Transistor )
Fabricantes	GTM
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No Preview Available ! www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : GSS9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 25m 7A Description The GSS9962 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features Simple Drive Requirement Low On-resistance Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1 Total Power Dissipation VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Ratings 40 ±20 7 5.5 20 2 0.016 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-amb Value 62.5 Unit /W GSS9962 Page: 1/4 1 page

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PDF GSS9962 Data sheet ( Hoja de datos )