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PDF OPE5194WK Data sheet ( Hoja de datos )
| Número de pieza | OPE5194WK | |
| Descripción | GAAIAS INFRARED EMITTER | |
| Fabricantes | OPTEK Technologies | |
| Logotipo |  |
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GaAlAs Infrared Emitter
OPE5194WK
The OPE5194WK is GaAlAs infrared emitting diode
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
DIMENSIONS (Unit : mm)
FEATURES
• High-output power
• Narrow beam angle
• Available for pulse operating
2- 0.5
APPLICATIONS
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
2.5
Anode
Cathode
STORAGE
Tolerance : ±0.2mm
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
PD 150
Forward current
Pulse forward current
IF
1 IFP
100
1.0
Reverse voltage
VR 5.0
Operating temp.
Topr.
-25~ +85
Soldering temp.
2 Tsol.
260.
1.Duty ratio = 1/100, pulse width=0.1ms.
2.Lead Soldering Temperature (2mm from case for 5sec.).
(Ta=25°C )
Unit
A
°C
°C
ELECTRO-OPTICALCHARACTERISTICS
Item Symbol
Forward voltage
VF
Reverse current
Capacitance
IR
Ct
Radiant intensity
Ie
Peak emission wavelength
Spectral bandwidth 50%
p
Half angle
Conditions
IF =100mA
VR= 5V
f = 1MHz
IF=100mA
IF= 50mA
IF= 50mA
IF=100mA
(Ta=25°C)
Min. Typ. Max. Unit
1.4 1.7 V
10 µA
20 pF
100 mW/
940 nm
45 nm
±10 deg.
27
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