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Datasheet RQK0604IGDQA Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RQK0604IGDQA | Silicon N Channel MOS FET Power Switching
RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
REJ03G1496-0100 Rev.1.00 Jan 15, 2007
Features
• Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive
Outlin | Renesas Technology | data |
RQK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RQK0201QGDQA | Silicon N-Channel MOS FET RQK0201QGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “QG”.
P Renesas data | | |
2 | RQK0202RGDQA | Silicon N-Channel MOS FET RQK0202RGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “RG”.
P Renesas data | | |
3 | RQK0203SGDQA | Silicon N-Channel MOS FET RQK0203SGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “SG”.
1 2
Renesas data | | |
4 | RQK0204TGDQA | Silicon N-Channel MOS FET RQK0204TGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “TG”.
1 2 Renesas data | | |
5 | RQK0301FGDQS | Silicon N-Channel MOS FET RQK0301FGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID = 3 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “FG”. Renesas data | | |
6 | RQK0302GGDQA | Silicon N-Channel MOS FET RQK0302GGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 92 mΩ typ (VGS = 10 V, ID = 1.3 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Marking is “GG”.
1 2
Renesas data | | |
7 | RQK0302GGDQS | Silicon N-Channel MOS FET RQK0302GGDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 81 mΩ typ (VGS = 10 V, ID = 1.9 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
Note: Marking is “GG� Renesas data | |
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Número de pieza | Descripción | Fabricantes | |
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