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부품번호 | WFP730 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Wisdom technologies | ||
로고 | |||
www.DataSheet4U.com
Wisdom Semiconductor
WFP730
N-Channel MOSFET
Features
■ RDS(on) (Max 0.95 Ω )@VGS=10V
■ Gate Charge (Typical 25nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
400
6.0
3.6
24
±30
390
8.75
5.5
87.5
0.70
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.43
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※Notes:
1.
2.
IVDG=S
=0V
250µ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
101 100 µs
1 ms
10 ms
100 DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 3.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1 . Z θ JC( t ) = 1 . 4 3 ℃ / W M a x .
2 . D u ty F a cto r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t)
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
4페이지 TO-220 Package Dimension
Dim.
Min.
mm
Typ.
A 9.7
B 6.3
C 9.0
D 12.8
E 1.2
F 1.7
G 2.5
H 3.0
I 1.25
J 2.4
K 5.0
L 2.2
M 1.25
N 0.45
O 0.6
Ø 3.6
Max.
10.1
6.7
9.47
13.3
1.4
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
Min.
0.382
0.248
0.354
0.504
0.047
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
Inch
Typ.
0.067
0.098
0.142
Max.
0.398
0.264
0.373
0.524
0.055
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
E
B
F
C
A
HI
G
D
L
1
2
3
J
K
N
φ
M
1. Gate
2. Drain
3. Source
O
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
WFP730 | N-Channel MOSFET | Wisdom technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |