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부품번호 | GTT2602 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | GTM | ||
로고 | |||
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2602
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
34m
6.3A
Description
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2602 is universally used for all commercial-industrial applications.
Features
*Capable of 2.5V gate drive
*Low on-resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
20
±12
6.3
5
30
2
0.016
-55 ~ +150
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
ISSUED DATE :2006/03/28
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GTT2602 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
GTT2603 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |