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Datasheet GTT2605 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GTT2605 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -4.0A
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec | GTM | mosfet |
GTT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GTT2602 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2602
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 34m 6.3A
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti GTM mosfet | | |
2 | GTT2603 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2603
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 65m -5.0A
The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec GTM mosfet | | |
3 | GTT2604 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2604
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 45m 5.5A
The GTT2604 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti GTM mosfet | | |
4 | GTT2605 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -4.0A
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec GTM mosfet | | |
5 | GTT2610 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/06/13 REVISED DATE :
GTT2610
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 90m 3A
The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective GTM mosfet | | |
6 | GTT2623 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 170m -2.0A
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe GTM mosfet | | |
7 | GTT2625 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2625
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 135m -2.3A
The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe GTM mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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