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PDF GTT3585 Data sheet ( Hoja de datos )
| Número de pieza | GTT3585 | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GTT3585 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2006/02/23
REVISED DATE :
GTT3585
N-CH BVDSS 20V
N-CH RDS(ON) 75m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
3.5A
-20V
N-CH RDS(ON) 160m
Description
N-CH ID
-2.5A
The GTT3585 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
N-channel P-channel
20 -20
± 12 ± 12
3.5 -2.5
2.8 -1.97
10 -10
1.14
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
110
Unit
/W
GTT3585
Page: 1/7
1 page  
N-Channel
ISSUED DATE :2006/02/23
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
180 /W
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GTT3585
Fig 12. Gate Charge Waveform
Page: 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GTT3585.PDF ] | |
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