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Datasheet G3403 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/04/01 REVISED DATE :
G3403
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 75m -3.7A
The G3403 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403 is univers |  GTM | mosfet |
| 2 | G3403A | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/09 REVISED DATE :
G3403A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 70m -3.2A
The G3403A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403A is univ | GTM | mosfet |
G34 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G3400 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/08/14 REVISED DATE :
G3400
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 28m 5.8A
The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G340 GTM mosfet | | |
| 2 | G3401 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G3401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2006/08/31 REVISED DATE :
BVDSS RDS(ON) ID
-30V 50m -4.2A
Description
The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-ef GTM mosfet | | |
| 3 | G3402 | 4-Bit Bidirectional Voltage Level Translator Global Mixed-mode Technology
G3402
4-Bit Bidirectional Voltage Level Translator for
Open Drain and Push-Pull Applications
Features
4-Bit Bidirectional Translator for Open Drain
and Push-Pull Bus Applications I2C and SMBus Compatible Less than 1.5ns Maximum Propagation Delay to
Accommoda  Global Mixed-mode Technology translator | | |
| 4 | G3403 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/04/01 REVISED DATE :
G3403
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 75m -3.7A
The G3403 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403 is univers GTM mosfet | | |
| 5 | G3403A | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/09 REVISED DATE :
G3403A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 70m -3.2A
The G3403A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3403A is univ GTM mosfet | | |
| 6 | G3407 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
CORPORATION
G3407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2007/01/15 REVISED DATE :
BVDSS RDS(ON) ID
-30V 52m -4.1A
Description
The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The devic GTM mosfet | |
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