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PDF GBAW56 Data sheet ( Hoja de datos )
| Número de pieza | GBAW56 | |
| Descripción | SWITCHING DIODE | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2004/02/06
REVISED DATE :2005/12/23C
G B AW 56
SURFACE MOUNT, SWITCHING DIODE
Description
The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology,
and encapsulated in a small SOT-23 plastic SMD package.
Package Dimensions
Style: Pin 1.Cathode 2.Cathode 3. Common Anode
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
single diode loaded (note1)
double diode loaded (note1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (1ms)
Total Power Dissipation
Notes: 1. Device mounted on an FR4 printed-circuit board.
Symbol
Tj
Tstg
VRRM
VR
IF
IFRM
IFSM
PD
Ratings
+125
-65 ~ +150
85
75
150
130
500
1
250
Unit
V
V
mA
mA
A
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Voltage
VR 85
-
V IR=100uA
VF(1)
-
715 mV IF=1mA
Forward Voltage
VF(2)
-
855 mV IF=10mA
VF(3)
-
1000
mV IF=50mA
VF(4)
-
1250
mV IF=150mA
Reverse Current
IR - 1 uA VR=80V
Diode Capacitance
CD
2 pF VR=0, f=1MHz
Reverse Recovery Time
Trr -
4 nS IF=IR=10mA, RL=100 measured at IR=1mA
GBAW56
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GBAW56.PDF ] | |
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