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Datasheet GBC856 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GBC856 | PNP EPITAXIAL TRANSISTOR
GBC856
Description Package Dimensions
1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R
The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1 |  GTM | transistor |
GBC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GBC327 | PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B
GBC327
Description Features
PNP SILICON TRANSISTOR
The GBC327 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC337
D
Package Dimensions
E S1
T GTM transistor | | |
| 2 | GBC328 | PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/10/21 REVISED DATE :
GBC328
Description Features
PNP SILICON TRANSISTOR
The GBC328 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC338
D
Package Dimensions
E S1
TO-92
A
S GTM transistor | | |
| 3 | GBC337 | NPN SILICON TRANSISTOR
ISSUED DATE :2005/10/21 REVISED DATE :
GBC337
Description Features
NPN SILICON TRANSISTOR
The GBC337 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327
D
Package Dimensions
E S1
TO-92
A
S E GTM transistor | | |
| 4 | GBC338 | NPN SILICON TRANSISTOR
ISSUED DATE :2005/10/21 REVISED DATE :
GBC338
Description Features
NPN SILICON TRANSISTOR
The GBC338 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328
D
Package Dimensions
E S1
TO-92
A
S E GTM transistor | | |
| 5 | GBC546 | NPN SILICON TRANSISTOR
ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B
GBC546
Description Features
NPN SILICON TRANSISTOR
The GBC546 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC556
D
Package Dimensions
E S1
TO-92 GTM transistor | | |
| 6 | GBC547 | NPN SILICON TRANSISTOR
ISSUED DATE :2005/10/21 REVISED DATE :
GBC547
Description Features
NPN SILICON TRANSISTOR
The GBC547 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC557
D
Package Dimensions
E S1
TO-92
A
S E A GTM transistor | | |
| 7 | GBC548 | NPN SILICON TRANSISTOR
ISSUED DATE :2005/10/21 REVISED DATE :
GBC548
Description Features
NPN SILICON TRANSISTOR
The GBC548 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC558
D
Package Dimensions
E S1
TO-92
A
S E A GTM transistor | |
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