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PDF NP100P04PLG Data sheet ( Hoja de datos )
| Número de pieza | NP100P04PLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P04PLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP100P04PLG-E1-AY Note
NP100P04PLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A)
RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = m100 A
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−40
m20
m100
m300
200
1.8
175
−55 to +175
74
550
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18694EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
6
VGS = −4.5 V
4
2
0
-75
−10 V
ID = −50 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
10000
SWITCHING CHARACTERISTICS
1000
td(off)
100
td(on)
tf
tr
10 VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.1 -1 -10 -100
ID - Drain Current - A
-1000
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP100P04PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-0.1 -1
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40 -12
VDD = −32 V
−20 V
-30 −8 V
-9
-20
-10
0
0
-6
VGS
-3
VDS
ID = −100 A
0
50 100 150 200 250 300 350
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1 -1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18694EJ3V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP100P04PLG.PDF ] | |
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