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NP100P06PLG 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP100P06PLG-E1-AY Note
NP100P06PLG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
High current rating: ID(DC) = m100 A
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
m20
m100
m300
200
1.8
175
55 to +175
64
420
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18695EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007




NP100P06PLG pdf, 반도체, 판매, 대치품
-300
-250
-200
-150
-100
-50
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
4.5 V
Pulsed
-0.5 -1 -1.5
VDS - Drain to Source Voltage - V
-2
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 VDS = 10 V
ID = 1 mA
0
-75 -25 25
75 125 175
Tch - Channel Temperature - °C
225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6 VGS = 4.5 V
4 10 V
2
Pulsed
0
-1
-10
-100
-1000
ID - Drain Current - A
NP100P06PLG
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = 10V
Pulsed
-10
-1
-0.1
-0.01
-0.001
0
Tch = 55°C
25°C
25°C
75°C
125°C
150°C
175°C
-1 -2 -3 -4
VGS - Gate to Source Voltage - V
-5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
Tch = 55°C
25°C
25°C
75°C
10
125°C
150°C
1 175°C
VDS = 10 V
Pulsed
0.1
-0.1 -1 -10
-100
ID - Drain Current - A
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
16
ID = 100 A
12
50 A
20 A
8
4
Pulsed
0
0 -5
-10 -15
VGS - Gate to Source Voltage - V
-20
4 Data Sheet D18695EJ3V0DS

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NP100P06PLG 전자부품, 판매, 대치품
NP100P06PLG
The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
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(Note)
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defined above).
M8E 02. 11-1

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