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부품번호 | GE04N70B 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | GTM | ||
로고 | |||
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Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE04N70B
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
650/700V
2.4
4A
Description
The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Simple Drive Requirement
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
A/H VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
650/700
20
4
2.5
15
62.5
0.5
100
4
4
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
2.0
62
Unit
/W
/W
1/5
www.DataSheet4U.com
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
4/5
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부품번호 | 상세설명 및 기능 | 제조사 |
GE04N70B | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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