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PDF GE70T03 Data sheet ( Hoja de datos )
| Número de pieza | GE70T03 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GE70T03 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2005/02/25
REVISED DATE :2005/12/12B
GE70T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
10m
60A
Description
The GE70T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
25
±20
60
43
195
53
0.36
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Value
2.8
110
Unit
/W
/W
GE70T03
Page: 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GE70T03.PDF ] | |
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