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Número de pieza | LNC701PS | |
Descripción | GaAlAs Semiconductor Laser | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNC701PS (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Semiconductor Laser
LNC701PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
Applications
Optical data processing devices
Optical disk memory drive
Optical measuring equipment
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings
PO 35
VR 2
VR (PIN)
30
Pd (PIN)
100
Topr –10 to +60
Tstg – 40 to +80
Unit
mW
V
V
mW
˚C
˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Y
Unit : mm
2
LD
X
1
Junction plane
PD
3
1.0±0.1
Z
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2 max.
3-ø0.45
2
1
ø2.0
3
Bottom view
1: LD anode
2: Common case
3: PD cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Threshold current
Ith CW
10 20 30 mA
Operating current
Operating voltage
Oscillation wavelength
Horizontal direction*1
Radiation angle
Vertical direction*1
Differential efficiency
IOP
VOP
λL
θ//
θ⊥
η
CW PO = 30mW
CW PO = 30mW
CW PO = 30mW
CW PO = 30mW
CW PO = 30mW
CW PO = 3 - 30mW
30 55 70 mA
2.0 2.5
V
780 785 790 nm
8.5 10 11.5 deg.
23 25 28 deg.
0.8 1.0 1.2
PIN photo current
IP CW PO = 30mW, VR (PIN) = 5V
0.3
mA
Reverse current (DC)
IR VR (PIN) = 15V
0.1 µA
Optical axis
X direction θX
CW PO = 30mW
–2.0 +2.0 deg.
accuracy Y direction θY
CW PO = 30mW
–3.0 +3.0 deg.
*1 The radiation angle is indicated as the full angle at half maximum.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNC701PS.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNC701PS | GaAlAs Semiconductor Laser | Panasonic Semiconductor |
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